产品分类/ Products
- HTR7216(S) 带自动呼吸功能的18x12阵列LED 驱
- HTN5157 VIN 45V异步PWM升压/SPEIC/反激式控制器
- HTN865B 36V, 20A高效异步升压转换器
- HTA8111 18W内置升压单声道D类音频功放
- HTA8127 内置升压的77W单体声D类音频功放
- HT517 3.2W高性能数字单声道D类音频功率放大器
- HTN872A 20V, 20A全集成同步升压转换器
- HTA8128 内置升压的60W立体声D类音频功放
- AU6815 集成音频 DSP 的 2×25W 数字型 C
- HTN78A3 6V~140V输入，3A实地异步降压变换器
- HT81297 18W内置升压单声道D类音频功放
- HT337B 120W 单声道D类音频功放
- NS2583 同步升压型 2A 双节锂电池充电管理 IC
- NLC47022带NTC功能和电量均衡功能电流2A 5V异
MOSFET
产品名称：NP4953CSR P+P -30V 5.5A+5.5A
型号： NP4953CSR
产片介绍：30V Dual P-Channel Enhancement Mode MOSFETDescription The NP4953CSR uses advanced trench technology to provide excellent RDS(ON) ，low gate charge and operation w
产品名称：NP4409SR P管 -30V -15A
型号： NP4409SR
产片介绍：40V N-Channel Enhancement Mode MOSFETDescription The NP4009SR uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequenc
产品名称：NP4407SR P管 -30V -12A
型号： NP4407SR
产片介绍：30V P-Channel Enhancement Mode MOSFETDescription The NP4407SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
产品名称：NP4419SR P管 -30V -9A
型号： NP4419SR
产片介绍：30V P-Channel Enhancement Mode MOSFETDescription The NP4419SR uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge It ca
产品名称：NP8205MR N+N 20V 6+6A
型号： NP8205MR
产片介绍：20V Dual N-Channel Enhancement Mode MOSFETDescription The NP8205 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and operati
产品名称：NP2301AVR P管 -20V -2.8A
型号： NP2301AVR
产片介绍：20V P-Channel Enhancement Mode MOSFETDescription General Features The NP2301AVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and
产品名称：NP2300MR-M N管 20V 6A
型号： NP2300MR-M
产片介绍：N-Channel Enhancement Mode MOSFETDescription The NP2300MR uses advanced trench technology to provide excellent RDS(ON) General Features , low gate charge and high
产品名称：NP3400MR N管 30V 6.2A
型号： NP3400MR
产片介绍：N-Channel Enhancement Mode MOSFETDescription The NP3400 uses advanced trench technology to provide excellent RDS(ON) V , low gate charge and high density cel
